Browsing by author "Chini, Alessandro"
Now showing items 1-4 of 4
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AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
Zanoni, Enrico; Meneghini, Matteo; Chini, Alessandro; Marcon, Denis; Meneghesso, Gaudenzio (2013) -
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface
Meneghini, Matteo; Bertin, Marco; Stocco, Antonio; dal Santo, Gabriele; Marcon, Denis; Malinowski, Pawel; Chini, Alessandro; Meneghesso, Gaudenzio; Zanoni, Enrico (2013) -
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model
Meneghini, Matteo; Stocco, Antonio; Bertini, Marco; Ronchi, Nicolò; Chini, Alessandro; Marcon, Denis; Meneghesso, Gaudenzio; Zanoni, Enrico (2011) -
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
Mengehini, Matteo; Stocco, Antonio; Bertin, Marcon; Marcon, Denis; Chini, Alessandro; Meneghesso, Gaudenzio; Zanoni, Enrico (2012-01)