Browsing by author "Tyaginov, S. E."
Now showing items 1-3 of 3
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A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs
Illarionov, Yu. Yu.; Bina, M.; Tyaginov, S. E.; Rott, K.; Reisinger, H.; Kaczer, Ben; Grasser, T. (2014) -
Hot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology
Makarov, A.; Tyaginov, S. E.; Kaczer, Ben; Jech, M.; Vaisman Chasin, Adrian; Grill, A.; Hellings, Geert; Vexler, M. I.; Linten, Dimitri; Grasser, T. (2017) -
Mapping of CMOS FET degradation in bias space – Application to DRAM peripheral devices
Kaczer, Ben; Franco, Jacopo; Tyaginov, S. E.; Jech, M.; Rzepa, G.; Grasser, T.; O'Sullivan, Barry; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Linten, Dimitri; Horiguchi, Naoto (2017)