Browsing by author "Pobegen, Gregor"
Now showing items 1-6 of 6
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Border trap based modeling of SiC transistor transfer characteristics
Tyaginov, Stanislav; Jech, Markus; Rzepa, Gerhard; Grill, Alexander; El-Sayed, Al-Moatasem; Pobegen, Gregor; Makarov, Alexander; Grasser, Tibor (2018) -
Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes
Grasser, Tibor; Waltl, Michael; Wimmer, Yannick; Goes, Wolfgang; Kosik, R.; Rzepa, Gerhard; Resinger, Hans; Pobegen, Gregor; El-Sayed, A.; Shluger, A.; Kaczer, Ben (2015) -
Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
Vasilev, Alexander; Jech, Markus; Grill, Alexander; Rzepa, Gerhard; Schleich, Christian; Makarov, Alexander; Pobegen, Gregor; Grasser, Tibor; Waltl, Michael; Tyaginov, Stanislav (2020) -
Physical modeling of bias temperature instabilities in SiC MOSFETs
Schleich, Christian; Berens, Judith; Rzepa, Gerhard; Pobegen, Gregor; Rescher, Gerald; Tyaginov, Stanislav; Grasser, Tibor; Waltl, Michael (2019) -
TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs
Vasilev, Alexander; Jech, Markus; Grill, Alexander; Rzepa, Gerhard; Schleich, Christian; Tyaginov, Stanislav; Makarov, Alexander; Pobegen, Gregor; Grasser, Tibor; Waltl, Michael (2022-04-19) -
The "permanent" component of NBTI: composition and annealing
Grasser, Tibor; Aichinger, Thomas; Pobegen, Gregor; Reisinger, Hans; Wagner, Paul-Jurgen; Franco, Jacopo; Nelhiebel, M.; Kaczer, Ben (2011-04)