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Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes
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Authors
Grasser, Tibor
;
Waltl, Michael
;
Wimmer, Yannick
;
Goes, Wolfgang
;
Kosik, R.
;
Rzepa, Gerhard
;
Resinger, Hans
;
Pobegen, Gregor
;
El-Sayed, A.
;
Shluger, A.
;
Kaczer, Ben
Conference
IEEE International Electron Devices Meeting - IEDM
Title
Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes
Publication type
Proceedings paper
Embargo date
9999-12-31
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