Browsing by author "Räisänen, P.I."

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A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers

Alam, M.A.; Green, Martin; Ho, M.Y.; Vandervorst, Wilfried; Brijs, Bert; Conard, Thierry; Räisänen, P.I. (2002)
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)

Green, Martin; Ho, M.Y.; Busch, B.; Wilk, G.D.; Sorsch, T.; Conard, Thierry; Brijs, Bert; Vandervorst, Wilfried; Räisänen, P.I.; Muller, D.; Bude, M.; Grazul, J. (2002)