Browsing by author "Ji, Z."
Now showing items 21-25 of 25
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Origins and implications of increased channel hot carrier variability in nFinFETs
Kaczer, Ben; Franco, Jacopo; Cho, Moon Ju; Grasser, Tibor; Roussel, Philippe; Tyaginov, Stanislav; Bina, Markus; Wimmer, Y.; Procel, L. M.; Trojman, Lionel; Crupi, Felice; Pitner, Gregory; Putcha, Vamsi; Weckx, Pieter; Bury, Erik; Ji, Z.; De Keersgieter, An; Chiarella, Thomas; Horiguchi, Naoto; Groeseneken, Guido; Thean, Aaron (2015) -
Real Vth instability of pMOSFETs under practical operation conditions
Zhang, J. F.; Ji, Z.; Chang, M. H.; Kaczer, Ben; Groeseneken, Guido (2007-12) -
Time-dependent variation: A new defect-based prediction methodology
Duan, M.; Zhang, J. F.; Ji, Z.; Zhang, W.; Kaczer, Ben; Schram, Tom; Ritzenthaler, Romain; Thean, Aaron; Groeseneken, Guido; Asenov, A. (2014) -
Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
Ma, J; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Duan, M.; Zhang, W.; Zheng, X.F.; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2013) -
Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
Zhou, L.; Zhang, Q.; Yang, H.; Ji, Z.; Zhang, Z.; Liu, Q.; Xu, H.; Tang, B.; Simoen, Eddy; Ma, X.; Wang, X.; Li, Y.; Yin, H.; Luo, J.; Zhao, C.; Wang, W. (2020)