Browsing by author "Germain, Marianne"
Now showing items 1-20 of 129
-
A hard switching VIENNA boost converter for characterization of AlGaN/GaN/AlGaN power DHFETs
Everts, Jordi; Jacqmaert, Pieter; Gelagaev, Ratmir; Das, Jo; Germain, Marianne; Van den Keybus, Jeroen; Driesen, Johan (2010) -
A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon
Everts, Jordi; Das, Jo; Van Den Keybus, Jeroen; Genoe, Jan; Germain, Marianne; Driesen, Johan (2010) -
A load-pull wafer-mapper
Vanaverbeke, Fre; Vaesen, Kristof; Xiao, Dongping; Pauwels, Luc; De Raedt, Walter; Germain, Marianne; Degroote, Stefan; Das, Jo; Derluyn, Joff; Schreurs, Dominique (2008) -
A very compact power amplifier using GaN HEMTs in multi-layer thin-film technology
Liu, Rui; Schreurs, Dominique; De Raedt, Walter; Vanaverbeke, Fre; Das, Jo; Germain, Marianne; Mertens, Robert (2010) -
AlGaN Extrem-UV detectors for space applications
John, Joachim; Malinowski, Pawel; Alparicio, Patricia; Hellings, Geert; Germain, Marianne; Duboz, J.-Y.; Semond, F.; Hochedez, J.-F.; Benmoussa, A. (2007) -
AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range
Malinowski, Pawel; John, Joachim; Lorenz, Anne; Aparicio Alonso, Patricia; Germain, Marianne; Derluyn, Joff; Cheng, Kai; Borghs, Gustaaf; Mertens, Robert; Duboz, Jean Yves; Semond, Fabrice; Hochedez, J.-F.; Benmoussa, A. (2008) -
AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Balachander, Krishnan; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2007) -
AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Balachander, Krishnan; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2008) -
AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range
Malinowski, Pawel; Duboz, Jean-Yves; John, Joachim; Sturdevant, Charles; Das, Jo; Derluyn, Joff; Germain, Marianne; De Moor, Piet; Minoglou, Kiki; Semond, Fabrice; Frayssinet, Eric; Hochedez, Jean-Francois; Giordanengo, Boris; Van Hoof, Chris; Mertens, Robert (2010) -
AlGaN/GaN HEMT : when MOVPE meets the device challenge
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Cheng, Kai; Degroote, Stefan; Derluyn, Joff; Das, Johan; Vandersmissen, Raf; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Derluyn, Joff; Sijmus, Bram; Favia, Paola; Richard, Olivier; Bender, Hugo; Germain, Marianne; Borghs, Gustaaf (2007) -
AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Degroote, Stefan; Xiao, Dongping; Lorenz, Anne; Boeykens, Steven; Germain, Marianne; Borghs, Gustaaf (2007-01) -
AlGaN/GaN HEMT: the growth challenge
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Moerman, Ingrid; Borghs, Gustaaf (2002) -
AlGaN/GaN HEMTs on Si substrates: Can they overcome the thermal limit?
Das, Jo; Oprins, Herman; Derluyn, Joff; Germain, Marianne; Borghs, Gustaaf (2007-05) -
AlGaN/GaN HEMTs with backside Schottky contact
Russo, S.; Di Carlo, A.; Das, Jo; Germain, Marianne; Borghs, Gustaaf (2007) -
AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Derluyn, Joff; Sijmus, Bram; Favia, Paola; Richard, Olivier; Bender, Hugo; Germain, Marianne; Borghs, Gustaaf (2008) -
AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
Srivastava, Puneet; Das, Jo; Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Malinowski, Pawel; Kang, Xuanwu; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Borghs, Gustaaf; Mertens, Robert; Germain, Marianne (2010) -
AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
Visalli, Domenica; Derluyn, Joff; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Germain, Marianne; Van Hove, Marleen; Borghs, Gustaaf (2008) -
AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2009) -
AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation
Cheng, Kai; Degroote, Stefan; Leys, Maarten; Medjdoub, Farid; Derluyn, Joff; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2011)