Browsing by author "Germain, Marianne"
Now showing items 21-40 of 129
-
AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range
John, Joachim; Malinowski, Pawel; Aparicio, Patricia; Hellings, Geert; Lorenz, Anne; Germain, Marianne; Semond, F.; Duboz, J.-Y.; Benmoussa, A.; Hochedez, J.-F.; Kroth, U.; Richter, M. (2007) -
ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements
Schreurs, Dominique; Verspecht, Jan; Vandamme, E.; Vellas, N.; Gaquiere, C.; Germain, Marianne; Borghs, Gustaaf (2003) -
ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
Germain, Marianne; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Boeykens, Steven; Derluyn, Joff; Das, Johan; Ruythooren, Wouter; Vandersmissen, Raf; Schreurs, Dominique; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection
Malinowski, Pawel; John, Joachim; Duboz, Jean-Yves; Hellings, Geert; Lorenz, Anne; Rodriguez Madrid, Juan; Sturdevant, Charles; Cheng, Kai; Leys, Maarten; Derluyn, Joff; Das, Jo; Germain, Marianne; Minoglou, Kiki; De Moor, Piet; Frayssinet, Eric; Semond, Fabrice; Hochedez, Jean-Francois; Giordanengo, Boris; Mertens, Robert (2009-12) -
Breakdown voltage mechanisms in AlGaN switching diodes
Lorenz, Anne; John, Joachim; Derluyn, Joff; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2007) -
Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs
Crupi, G.; Schreurs, Dominique; Caddemi, A.; Angelov, I.; Liu, Rui; Germain, Marianne; De Raedt, Walter (2009) -
Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
Wang, Wenfei; Derluyn, Joff; Germain, Marianne; De Wolf, Ingrid; Leys, Maarten; Boeykens, Steven; Degroote, Stefan; Ruythooren, Wouter; Das, Johan; Schreurs, Dominique; Nauwelaers, Bart; Borghs, Gustaaf (2005) -
Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
Kudrawiec, Robert; Paszkiewicz, B.; Motyka, M.; Misciewic, Jan; Derluyn, Joff; Lorenz, Anne; Cheng, Kai; Das, Jo; Germain, Marianne (2008-11) -
Correlation of transport and structural properties in AlGaN/GaN HEMT: Strain modification by means of AlN interlayers
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Ruythooren, Wouter; Schreurs, Dominique; Choi, Kang-Hoon; Borghs, Gustaaf; Van Daele, Benny; Van Tendeloo, Gustaaf; Farvacque, Jean-Louis; Carosella, Francesca (2003) -
Crack-free GaN Grown on Si(111) by MOVPE by introducing Step-Graded AlGaN Buffer Layers
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Boeykens, Steven; Derluyn, Joff; Germain, Marianne; Engelen, Jan; Borghs, Gustaaf (2005) -
Detailed analysis of parasitic loading effects on power performance of GaN-on-Silicon HEMTs
Xiao, Dongping; Schreurs, Dominique; De Raedt, Walter; Derluyn, Joff; Germain, Marianne; Nauwelaers, Bart; Borghs, Gustaaf (2009-12) -
Effect of metal work functions on barrier heights of Schottky contacts and two-dimensional electron gas in strained AlGaN/GaN heterostructures
Wang, Wenfei; Zimmermann, L.; Derluyn, Joff; Germain, Marianne; Schreurs, Dominique; Borghs, Gustaaf (2004) -
Effects of electron-phonon interaction and chemical shift on near-band-edge recombination in GaN
Germain, Marianne; Kartheuser, E.; Gurskii, A. L.; Lutsenko, E. V.; Marko, I. P.; Pavlovskii, V. N.; Yablonskii, G. P.; Heime, K.; Heuken, M.; Schineller, B. (2002) -
Efficiency enhancement of harmonic-tuned GaN power amplifier using Doherty like load modulation
Xiao, Dongping; Schreurs, Dominique; Angelov, I.; De Raedt, Walter; Derluyn, Joff; Germain, Marianne; Nauwelaers, Bart; Borghs, Gustaaf (2008) -
Epitaxial growth of III-nitrides on silicon substrates
Degroote, Stefan; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Derluyn, Joff; Borghs, Gustaaf; Germain, Marianne (2010) -
Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Cheng, Kai; Motsnyi, Vasyl; Leys, Maarten; Degroote, Stefan; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2007) -
Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Cheng, Kai; Motsnyi, Vasyl; Leys, Maarten; Degroote, Stefan; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2008) -
Evolution de caractéristiques statiques de HEMTs AlGaN/GaN soumis à un stress électrique réalisé à differentes températures
Boudart, B.; Llibre, J.F.; Briand, D.; Tala-Ighil, B.; Toutah, H.; Guhel, Y.; de Jaeger, J.C.; Bougrioua, Z.; Germain, Marianne; Moerman, Ingrid (2003) -
Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010)