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Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
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Authors
Wang, Wenfei
;
Derluyn, Joff
;
Germain, Marianne
;
De Wolf, Ingrid
;
Leys, Maarten
;
Boeykens, Steven
;
Degroote, Stefan
;
Ruythooren, Wouter
;
Das, Johan
;
Schreurs, Dominique
;
Nauwelaers, Bart
;
Borghs, Gustaaf
Conference
GaN, AlN, InN and Their Alloys
Title
Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
Publication type
Proceedings paper
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