Publication:

Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure

Date

2005
Proceedings Paper
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dc.contributor.authorWang, Wenfei
dc.contributor.authorDerluyn, Joff
dc.contributor.authorGermain, Marianne
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorLeys, Maarten
dc.contributor.authorBoeykens, Steven
dc.contributor.authorDegroote, Stefan
dc.contributor.authorRuythooren, Wouter
dc.contributor.authorDas, Johan
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorWang, Wenfei
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorRuythooren, Wouter
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorNauwelaers, Bart
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.accessioned2021-10-16T07:01:59Z
dc.date.available2021-10-16T07:01:59Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11540
dc.source.beginpageE8.20
dc.source.conferenceGaN, AlN, InN and Their Alloys
dc.source.conferencedate28/11/2004
dc.source.conferencelocationBoston, MA USA
dc.title

Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure

dc.typeProceedings paper
dspace.entity.typePublication
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