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Effects of electron-phonon interaction and chemical shift on near-band-edge recombination in GaN
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Authors
Germain, Marianne
;
Kartheuser, E.
;
Gurskii, A. L.
;
Lutsenko, E. V.
;
Marko, I. P.
;
Pavlovskii, V. N.
;
Yablonskii, G. P.
;
Heime, K.
;
Heuken, M.
;
Schineller, B.
Issue
12
Journal
Journal of Applied Physics
Volume
91
Title
Effects of electron-phonon interaction and chemical shift on near-band-edge recombination in GaN
Publication type
Journal article
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