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Effects of electron-phonon interaction and chemical shift on near-band-edge recombination in GaN

Date

2002
Journal article
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dc.contributor.authorGermain, Marianne
dc.contributor.authorKartheuser, E.
dc.contributor.authorGurskii, A. L.
dc.contributor.authorLutsenko, E. V.
dc.contributor.authorMarko, I. P.
dc.contributor.authorPavlovskii, V. N.
dc.contributor.authorYablonskii, G. P.
dc.contributor.authorHeime, K.
dc.contributor.authorHeuken, M.
dc.contributor.authorSchineller, B.
dc.date.accessioned2021-10-14T21:41:44Z
dc.date.available2021-10-14T21:41:44Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6353
dc.source.beginpage9827
dc.source.endpage9834
dc.source.issue12
dc.source.journalJournal of Applied Physics
dc.source.volume91
dc.title

Effects of electron-phonon interaction and chemical shift on near-band-edge recombination in GaN

dc.typeJournal article
dspace.entity.typePublication
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