Publication:
AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
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1929 since deposited on 2021-10-17
Acq. date: 2026-01-22
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Views
1929 since deposited on 2021-10-17
Acq. date: 2026-01-22
Citations