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AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance

Date

2008
Proceedings Paper
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dc.contributor.authorVisalli, Domenica
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorCheng, Kai
dc.contributor.authorGermain, Marianne
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-17T12:36:44Z
dc.date.available2021-10-17T12:36:44Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14761
dc.source.conference40th International Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate23/09/2008
dc.source.conferencelocationIbaraki Japan
dc.title

AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance

dc.typeProceedings paper
dspace.entity.typePublication
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