Browsing by author "Lowe, Antony"
Now showing items 1-3 of 3
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Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications
Ackaert, Jan; Lowe, Antony; Boonen, Sylvie; Yao, Thierry; Rayhem, Joseph; Desoete, Bart; Prasad, Jagdish; Thomason, Mike; Van Houdt, Jan; Degraeve, Robin; Haspeslagh, Luc; Hendrickx, Paul (2004) -
Characterization of tunnel oxides for non-volatile memory (NVM) applications
Ackaert, Jan; Vermeulen, Tom; Lowe, Antony; Boonen, Sylvie; Yao, Thierry; Prasad, Jagdish; Thomason, Mike; Van Houdt, Jan; Degraeve, Robin; Haspeslagh, Luc; Hendrickx, Paul (2003) -
Failure rate predictions for 0.35μm flash EEPROM memories from accelerated read disturb tests
Vermeulen, Tom; Yao, Thierry; Lowe, Antony; Cacharelis, Philippe; Degraeve, Robin; Van Houdt, Jan (2004-09)