Now showing items 1-3 of 3

    • Strain relaxation and distribution in GaN nanopillars using in-plane X-ray diffraction 

      Tseng, Peter; Dillemans, Leander; Gonzalez, Mario; Cheng, Kai; Borghs, Gustaaf; Lieten, Ruben (2012)
    • Strain relaxation in GaN nanopillars 

      Tseng, Peter; Gonzalez, Mario; Dillemans, Leander; Cheng, Kai; Jiang, Sijia; Vereecken, Philippe; Borghs, Gustaaf; Lieten, Ruben (2012)
    • Three-layer BEOL process integration with supervia and self-aligned-block options for the 3nm node 

      Vega Gonzalez, Victor; Wilson, Chris; Briggs, Basoene; Decoster, Stefan; Versluijs, Janko; Lesniewska, Alicja; Paolillo, Sara; Baert, Rogier; Puliyalil, Harinarayanan; Bekaert, Joost; Kesters, Els; Le, Quoc Toan; Lorant, Christophe; Varela Pedreira, Olalla; Teugels, Lieve; Heylen, Nancy; El-Mekki, Zaid; van der Veen, Marleen; Webers, Tomas; Vats, Hemant; Rynders, Luc; Cupak, Miroslav; Lee, Jae Uk; Drissi, Youssef; Halipre, Luc; Charley, Anne-Laure; Verdonck, Patrick; Witters, Thomas; Van Gompel, Sander; Kimura, Yosuke; Jourdan, Nicolas; Ciofi, Ivan; Gupta, Anshul; Contino, Antonino; Boccardi, Guillaume; Lariviere, Stephane; Dupas, Luc; De Wachter, Bart; Vancoille, Eric; Lazzarino, Frederic; Ercken, Monique; Debacker, Peter; Kim, Ryan Ryoung han; Trivkovic, Darko; Croes, Kristof; Leray, Philippe; Dillemans, Leander; Chen, Yi-Fan; Tokei, Zsolt (2019)