Browsing by author "Kobayashi, Kazutoshi"
Now showing items 1-7 of 7
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An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply
Nagao, Junichiro; Chatterjee, Urmimala; Li, Xiangdong; Furuta, Jun; Decoutere, Stefaan; Kobayashi, Kazutoshi (2021) -
Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations
Oshima, Azusa; Weckx, Pieter; Kaczer, Ben; Kobayashi, Kazutoshi; Matsumoto, Takashi (2015) -
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process
Yamashita, Yuki; Stoffels, Steve; Posthuma, Niels; Geens, Karen; Li, Xiangdong; Furuta, Jun; Decoutere, Stefaan; Kobayashi, Kazutoshi (2019) -
Monolithically integrated E-mode GaN-on-SOI gate driver with power GaN-HEMT for MHz-switching
Yamashita, Yuki; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Kobayashi, Kazutoshi (2018) -
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors
You, Shuzhen; Li, Xiangdong; Decoutere, Stefaan; Groeseneken, Guido; Chen, Zhanfei; Liu, Jun; Yamashita, Yuki; Kobayashi, Kazutoshi (2019) -
Monolithically integrated gate driver for MHz switching with an external inductor as a a current source
Nagao, Junichiro; Yamashita, Yuki; Furuta, Jun; Kobayashi, Kazutoshi; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan (2019) -
Physical-based RTN modeling of ring oscillators in 40-nm SiON and 28-nm HKMG by bimodal defect-centric behaviors
Oshima, Azusa; Kobayashi, Kazutoshi; Kishida, Ryo; Komawako, Takuya; Weckx, Pieter; Kaczer, Ben; Matsumoto, Takashi; Onodera, Hidetoshi (2016)