An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

Abstract

A three-level gate driver and a power Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) were monolithically integrated to prevent false turn-on, reduce reverse conduction loss and realize fast switching. The proposed gate driver works with an external and an integrated capacitor which supply negative gate voltage. Monolithic integration makes power conversion circuits smaller in size and improves circuit performance due to its lower parasitics. The integrated MIM (Metal-Insulator-Metal) capacitor improves dv/dt immunity. Measurement results showed that the proposed GaN-IC realized fast switching speed of 3.7 ns t(on) and 6.1 ns t(off), and improved efficiency of an SR buck-converter.