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An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply
Publication:
An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply
Date
2021
Journal article
https://doi.org/10.1587/elex.18.20210059
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nagao, Junichiro
;
Chatterjee, Urmimala
;
Li, Xiangdong
;
Furuta, Jun
;
Decoutere, Stefaan
;
Kobayashi, Kazutoshi
Journal
IEICE ELECTRONICS EXPRESS
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since deposited on 2022-03-08
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Metrics
Downloads
286
since deposited on 2022-03-08
65
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Views
1841
since deposited on 2022-03-08
438
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations