An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

dc.contributor.author	Nagao, Junichiro
dc.contributor.author	Chatterjee, Urmimala
dc.contributor.author	Li, Xiangdong
dc.contributor.author	Furuta, Jun
dc.contributor.author	Decoutere, Stefaan
dc.contributor.author	Kobayashi, Kazutoshi
dc.contributor.imecauthor	Chatterjee, Urmimala
dc.contributor.imecauthor	Li, Xiangdong
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidimec	Chatterjee, Urmimala::0000-0002-8934-6774
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2022-03-08T13:34:23Z
dc.date.available	2022-03-08T13:34:23Z
dc.date.issued	2021
dc.identifier.doi	10.1587/elex.18.20210059
dc.identifier.issn	1349-2543
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/39355
dc.publisher	IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
dc.source.beginpage	20210059
dc.source.issue	6
dc.source.journal	IEICE ELECTRONICS EXPRESS
dc.source.numberofpages	6
dc.source.volume	18
dc.title	An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply
dc.type	Journal article
dspace.entity.type	Publication
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