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Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors
Publication:
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors
Date
2019
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
You, Shuzhen
;
Li, Xiangdong
;
Decoutere, Stefaan
;
Groeseneken, Guido
;
Chen, Zhanfei
;
Liu, Jun
;
Yamashita, Yuki
;
Kobayashi, Kazutoshi
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1980
since deposited on 2021-10-28
Acq. date: 2025-10-27
Citations
Metrics
Views
1980
since deposited on 2021-10-28
Acq. date: 2025-10-27
Citations