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Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors

Date

2019
Proceedings Paper
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dc.contributor.authorYou, Shuzhen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorChen, Zhanfei
dc.contributor.authorLiu, Jun
dc.contributor.authorYamashita, Yuki
dc.contributor.authorKobayashi, Kazutoshi
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-28T00:10:41Z
dc.date.available2021-10-28T00:10:41Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34495
dc.source.beginpage158
dc.source.conference49th European Solid-State Device Research Conference
dc.source.conferencedate23/09/2019
dc.source.conferencelocationKraKow Poland
dc.source.endpage161
dc.title

Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors

dc.typeProceedings paper
dspace.entity.typePublication
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