Browsing by author "Afanas'ev, Valery"
Now showing items 1-14 of 14
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Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
Nguyen Hoang, Thoan; Jivanescu, Mihaela; O'Sullivan, Barry; Pantisano, Luigi; Gordon, Ivan; Afanas'ev, Valery; Stesmans, Andre (2012) -
Electronic properties of hydrogenated silicene and germanene
Houssa, Michel; Scalise, Emilio; Sankaran, Kiroubanand; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2011) -
Electronic properties of silicene: insights from first-principles modelling
Houssa, Michel; Pourtois, Geoffrey; Heyns, Marc; Afanas'ev, Valery; Stesmans, Andre (2011) -
Electronic properties of two-dimensional hexagonal germanium
Houssa, Michel; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2010) -
Experimental and theoretical investigation of defects at (100) Si(1-x)Ge(x)/oxide interfaces
Houssa, Michel; Pourtois, Geoffrey; Meuris, Marc; Heyns, Marc; Afanas'ev, Valery; Stesmans, Andre (2011) -
First-principles study of Ge dangling bonds in GeO2 and correlation with spin resinance at Ge/GeO2 interfaces
Houssa, Michel; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2011) -
Functional silicene and stanene nanoribbons compared tographene: electronic structure and transport
van den Broek, Bas; Houssa, Michel; Iordadidou, K.; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2016) -
Impact of point defects on the electronic and transport properties of silicene nanoribbons
Iordanidou, Konstantina; Houssa, Michel; van den Broek, Bas; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2016) -
Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling
Scalise, Emilio; Houssa, Michel; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2011) -
Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport
van den Broek, Bas; Houssa, Michel; Lu, Augustin; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2016-08) -
Structural and vibrational properties of amorphous GeO2 from first-principles
Scalise, Emilio; Houssa, Michel; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2011) -
Theoretical aspects of graphene-like group IV semiconductors
Houssa, Michel; Van den Broek, Bas; Scalise, Emilio; Ealet, Benedicte; Pourtois, Geoffrey; Chiappe, Daniele; Cinquanta, Emilio; Grazianetti, Claudio; Fanciulli, Marco; Molle, Allessandro; Afanas'ev, Valery; Stesmans, Andre (2014) -
Topological to trivial insulating phase transition in stanene
Houssa, Michel; van den Broek, Bas; Iordanidou, Konstantina; Lu, Augustin; Pourtois, Geoffrey; Locquet, Jean-Pierre; Afanas'ev, Valery; Stesmans, Andre (2016) -
Universal stress-defect correlation at (100)semiconductor/oxide interfaces
Houssa, Michel; Scarrozza, Marco; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2011)