Browsing by author "Li, Kan"
Now showing items 1-9 of 9
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3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
Reaz, Mahmud; Tonigan, Andrew M.; Li, Kan; Smith, M. Brandon; Rony, Mohammed W.; Gorchichko, Mariia; O'Hara, Andrew; Linten, Dimitri; Mitard, Jerome; Fang, Jingtian; Zhang, En Xia; Alles, Michael L.; Weller, Robert A.; Fleetwood, Daniel M.; Reed, Robert A.; Fischetti, Massimo, V; Pantelides, Sokrates T.; Weeden-Wright, Stephanie L.; Schrimpf, Ronald D. (2021) -
Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs
Li, Kan; Zhang, Enxia; Gorchichko, Mariia; Wang, Pengfei; Hiblot, Gaspard; Jourdain, Anne; Van Huylenbroeck, Stefaan; Reed, Robert; Fleetwood, Daniel; Schrimpf, Ronald (2020) -
Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
Li, Kan; Zhang, En Xia; Gorchichko, Mariia; Wang, Peng Fei; Reaz, Mahmud; Zhao, Simeng E.; Hiblot, Gaspard; Van Huylenbroeck, Stefaan; Jourdain, Anne; Alles, Michael L.; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2021) -
Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics
Li, Kan; Luo, Xuyi; Rony, M. W.; Gorchichko, Mariia; Hiblot, Gaspard; Van Huylenbroeck, Stefaan; Jourdain, Anne; Alles, Michael L.; Reed, Robert A.; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2023) -
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs
Luo, Xuyi; Zhang, En Xia; Wang, Peng Fei; Li, Kan; Linten, Dimitri; Mitard, Jerome; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2023) -
Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
Rony, M. W.; Zhang, En Xia; Toguchi, Shintaro; Luo, Xuyi; Reaz, Mahmud; Li, Kan; Linten, Dimitri; Mitard, Jerome; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2022) -
Single-event induced charge collection in Ge-channel pMos FinFETs
Rony, M.W.; Samsel, Isaak; Zhang, En Xia; Sternberg, Andrew; Li, Kan; Reaz, Mahumed; Austin, Stephanie; Reed, Robert; Fleetwood, Robert; Alles, Mike; Linten, Dimitri; Mitard, Jerome; Schrimpf, Ronald (2020-07) -
Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs
Rony, M. W.; Samsel, Isaak K.; Zhang, En Xia; Sternberg, Andrew; Li, Kan; Reaz, Mahmud; Austin, Stephanie M.; Alles, Michael L.; Linten, Dimitri; Mitard, Jerome; Reed, Robert A.; Fleetwood, Daniel M.; Schrimpf, Ronald D. (2021) -
Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors
Guo, Zixiang; Li, Kan; Li, Xun; Luo, Xuyi; Zhang, En Xia; Reed, Robert A.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Vaisman Chasin, Adrian; Mitard, Jerome; Linten, Dimitri (2023)