Browsing by author "Nakazaki, Nobuya"
Now showing items 1-5 of 5
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Ab initio analysis of defect formation and dopant activation in P and As co-doped Si
Nakazaki, Nobuya; Rosseel, Erik; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey (2019) -
Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy
Rosseel, Erik; Tirrito, Matteo; Porret, Clément; Douhard, Bastien; Meersschaut, Johan; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey; Nakazaki, Nobuya; Tolle, John (2019) -
Characterization of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Rosseel, Erik; Tirrito, Matteo; Porret, Clément; Douhard, Bastien; Meersschaut, Johan; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey; Nakazaki, Nobuya; Tolle, John (2019-06) -
Highly doped SiGe epitaxy in view of S/D applications
Rengo, Gianluca; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Nakazaki, Nobuya; Pourtois, Geoffrey; Vantomme, Andre; Loo, Roger (2020-07) -
Low temperature selective growth of heavily boron-doped germanium source /drain layers for advanced pMOS devices
Porret, Clément; Vohra, Anurag; Nakazaki, Nobuya; Hikavyy, Andriy; Douhard, Bastien; Meersschaut, Johan; Bogdanowicz, Janusz; Rosseel, Erik; Pourtois, Geoffrey; Langer, Robert; Loo, Roger (2020)