Browsing by author "Roelofs, Robin"
Now showing items 1-5 of 5
-
Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer
Ronchi, Nicolo; De Jaeger, Brice; Van Hove, Marleen; Roelofs, Robin; Wu, Tian-Li; Hu, Jie; Kang, Xuanwu; Decoutere, Stefaan (2014) -
Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN
Ronchi, Nicolo; De Jaeger, Brice; Van Hove, Marleen; Roelofs, Robin; Wu, Tian-Li; Hu, Jie; Kang, Xuanwu; Decoutere, Stefaan (2015) -
Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants
Chen, Yangyin; Roelofs, Robin; Redolfi, Augusto; Degraeve, Robin; Crotti, Davide; Fantini, Andrea; Clima, Sergiu; Govoreanu, Bogdan; Komura, Masanori; Goux, Ludovic; Zhang, Leqi; Belmonte, Attilio; Xie, Qi; Maes, Jan; Pourtois, Geoffrey; Jurczak, Gosia (2014) -
The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate
Wu, Tian-Li; Marcon, Denis; De Jaeger, Brice; Van Hove, Marleen; Bakeroot, Benoit; Lin, Dennis; Stoffels, Steve; Kang, Xuanwu; Roelofs, Robin; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics of AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs
Wu, Tian-Li; Marcon, Denis; De Jaeger, Brice; Van Hove, Marleen; Bakeroot, Benoit; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan; Roelofs, Robin (2015)