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Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics of AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs
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1853 since deposited on 2021-10-23
3last month
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Acq. date: 2026-05-17
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Statistics
Views
1853 since deposited on 2021-10-23
3last month
2last week
Acq. date: 2026-05-17
Citations