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Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics of AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs
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1858 since deposited on 2021-10-23
5last month
Acq. date: 2026-08-07
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Views
1858 since deposited on 2021-10-23
5last month
Acq. date: 2026-08-07
Citations