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Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics of AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs
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1847 since deposited on 2021-10-23
3last month
1last week
Acq. date: 2025-12-15
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Metrics
Views
1847 since deposited on 2021-10-23
3last month
1last week
Acq. date: 2025-12-15
Citations