Browsing by author "Porti, M."
Now showing items 1-3 of 3
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Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors
Polspoel, Wouter; Vandervorst, Wilfried; Aguilera, L.; Porti, M.; Nafria, M.; Aymerich, X. (2009) -
Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope
Blasco, X.; Porti, M.; Nafria, M.; Petry, Jasmine; Vandervorst, Wilfried (2005) -
Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM
Nafria, M.; Blasco, X.; Porti, M.; Aguilera, L.; Aymerich, X.; Petry, Jasmine; Vandervorst, Wilfried (2005)