Browsing by author "Anghel, C."
Now showing items 1-4 of 4
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A new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling
Chauhan, Y.; Krummenacher, F.; Anghel, C.; Gillon, R.; Bakeroot, Benoit; Declercq, M.; Ionescu, A. (2007-01) -
An experimental approach for bias-dependent drain series resistance evaluation in asymmetric HV MOSFETs
Hefyene, N.; Anghel, C.; Ionescu, A. M.; Frere, S.; Gillon, R.; Vermandel, Miguel; Bakeroot, Benoit; Doutrloigne, J. (2001) -
Electrical characterisation of high voltage MOSFETs using MESDRIFT
Anghel, C.; Hefyene, N.; Vermandel, Miguel; Bakeroot, Benoit; Doutreloigne, Jan; Gillon, R.; Ionescu, A.M. (2003) -
Investigations and physical modelling of saturation effects in lateral DMOS transistor architectures based on the concept of intrinsic drain voltage
Anghel, C.; Hefyene, N.; Ionescu, A. M.; Vermandel, Miguel; Bakeroot, Benoit; Doutrloigne, J.; Gillon, R.; Frere, S.; Maier., C.; Mourier, Y. (2001)