Browsing by author "Priesol, Juraj"
Now showing items 1-8 of 8
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3-D device electrothermal simulation for analysis of multifinger power HEMTs
Chvála, Ale; Marek, Juraj; Satka, Alexander; Priesol, Juraj; Príbytnŭ, Patrik; Donoval, Daniel; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan (2018) -
Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers
Priesol, Juraj; Satka, Alexander; Visalli, Domenica; Derluyn, Joff; Zhao, Ming; Stoffels, Steve (2017) -
Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers
Priesol, Juraj; Satka, Alexander; Visalli, Domenica; Zhao, Ming; Stoffels, Steve (2017) -
Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method
Priesol, Juraj; Satka, Alexander; Chvala, A.; Stoffels, Steve; Decoutere, Stefaan (2017-05) -
Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique
Priesol, Juraj; Satka, Alexander; Chvala, Ales; Stoffels, Steve; De Jaeger, Brice; Decoutere, Stefaan (2021) -
Investigation of semi-vertical GaN FET structures function using EBIC method
Satka, Alexander; Priesol, Juraj; You, Shuzhen; Geens, Karen; Decoutere, Stefaan (2020) -
MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)
Zhao, Ming; Priesol, Juraj; Satka, Alexander; Janicki, Lukasz; Baranowski, Michal; Misiewicz, Jan; Kudrawiec, Robert; Saripalli, Yoga (2016) -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit; Tallarico, Andrea Natale; Sangiorgi, Enrico; Fiegna, Claudio; Zheng, Jiaxin; Ma, X.; Borga, Matteo; Fabris, Elena; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Priesol, Juraj; Satka, Alexander (2019-04)