Publication:
MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)
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1955 since deposited on 2021-10-23
4last month
Acq. date: 2026-10-13
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1955 since deposited on 2021-10-23
4last month
Acq. date: 2026-10-13
Citations