Publication:
MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)
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1946 since deposited on 2021-10-23
2last month
Acq. date: 2026-01-25
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1946 since deposited on 2021-10-23
2last month
Acq. date: 2026-01-25
Citations