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MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)

Date

2016
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dc.contributor.authorZhao, Ming
dc.contributor.authorPriesol, Juraj
dc.contributor.authorSatka, Alexander
dc.contributor.authorJanicki, Lukasz
dc.contributor.authorBaranowski, Michal
dc.contributor.authorMisiewicz, Jan
dc.contributor.authorKudrawiec, Robert
dc.contributor.authorSaripalli, Yoga
dc.contributor.imecauthorZhao, Ming
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.date.accessioned2021-10-23T17:53:18Z
dc.date.available2021-10-23T17:53:18Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27667
dc.identifier.urlhttp://www.mrs.org/icmovpe-xviii-program-pdf/
dc.source.conference18th International Conference on Metal Organic Vapor Phase Epitaxy - MOVPE
dc.source.conferencedate10/07/2016
dc.source.conferencelocationSan Diego, CA USA
dc.title

MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)

dc.typeMeeting abstract
dspace.entity.typePublication
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