Browsing by author "Noakes, T.C.Q."
Now showing items 1-4 of 4
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Characterization of low energy (2-5keV) implantation into Si
Collart, E.J.; Kirkwood, D.; Vandenberg, J.A.; Werner, M.; Vandervorst, Wilfried; Brijs, Bert; Bailey, P.; Noakes, T.C.Q. (2002) -
Damage accumulation and dopant migration during shallow As and Sb implantation into Si
Werner, M.; van den Berg, J.A.; Armour, D.G.; Vandervorst, Wilfried; Collart, E.H.J.; Goldberg, R.D.; Bailey, P.; Noakes, T.C.Q. (2004) -
High depth resolution characterization of the damage and annealing behaviour of ultrashallow As-implants in Si
van den Berg, J.A.; Armour, D.G.; Werner, M.; Whelan, S.; Vandervorst, Wilfried; Clarysse, Trudo; Collart, E.H.J.; Goldberg, R.D.; Bailey, P.; Noakes, T.C.Q. (2002) -
High resolution, quantitative depth profiling analysis of nm thin hgh-k dielectriclayers using medium energy ion scattering (MEIS)
van den Berg, J.A.; Reading, M.A.; Armour, D.G>; Bailey, P.; Noakes, T.C.Q.; Conard, Thierry; De Gendt, Stefan (2009)