Browsing by author "Nelhiebel, M."
Now showing items 1-7 of 7
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A two-stage model for negative bias temperature instability
Grasser, Tibor; Kaczer, Ben; Goes, Wolfgang; Aichinger, Thomas; Hehenberger, Philipp; Nelhiebel, M. (2009-04) -
Analytic modeling of the bias temperature instability using capture/emission time maps
Grasser, Tibor; Wagner, Paul-Jurgen; Reisinger, Hans; Aichinger, T.; Pobegen, G.; Nelhiebel, M.; Kaczer, Ben (2011-12) -
Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks
Grasser, T.; Kaczer, Ben; Aichinger, T.; Goes, W.; Nelhiebel, M. (2008) -
Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique
Hehenberger, Philipp; Aichinger, Thomas; Grasser, Tibor; Goes, Wolfgang; Triebl, O.; Kaczer, Ben; Nelhiebel, M. (2009-04) -
On the 'permanent' component of NBTI
Grasser, Tibor; Aichinger, Thomas; Reisinger, Hans; Franco, Jacopo; Wagner, Paul-Jürgen; Nelhiebel, M.; Ortolland, Claude; Kaczer, Ben (2010) -
The "permanent" component of NBTI: composition and annealing
Grasser, Tibor; Aichinger, Thomas; Pobegen, Gregor; Reisinger, Hans; Wagner, Paul-Jurgen; Franco, Jacopo; Nelhiebel, M.; Kaczer, Ben (2011-04) -
Understanding negative bias temperature instability in the context of hole trapping
Grasser, T.; Kaczer, Ben; Goes, W.; Aichinger, T.; Hehenberger, P.; Nelhiebel, M. (2009)