Browsing by author "Lorenz, Anne"
Now showing items 1-20 of 40
-
AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range
Malinowski, Pawel; John, Joachim; Lorenz, Anne; Aparicio Alonso, Patricia; Germain, Marianne; Derluyn, Joff; Cheng, Kai; Borghs, Gustaaf; Mertens, Robert; Duboz, Jean Yves; Semond, Fabrice; Hochedez, J.-F.; Benmoussa, A. (2008) -
AlGaN Schottky diodes for detector applications in the UV wavelength range
Hellings, Geert; John, Joachim; Lorenz, Anne; Malinowski, Pawel; Mertens, Robert (2009) -
AlGaN Schottky diodes for detector applications in the UV wavelength range
Hellings, Geert; John, Joachim; Lorenz, Anne; Mertens, Robert (2008) -
AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Degroote, Stefan; Xiao, Dongping; Lorenz, Anne; Boeykens, Steven; Germain, Marianne; Borghs, Gustaaf (2007-01) -
AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range
John, Joachim; Malinowski, Pawel; Aparicio, Patricia; Hellings, Geert; Lorenz, Anne; Germain, Marianne; Semond, F.; Duboz, J.-Y.; Benmoussa, A.; Hochedez, J.-F.; Kroth, U.; Richter, M. (2007) -
Approach for Al2O3 rear surface passivation of industrial p-type Si PERC above 19%
Vermang, Bart; Goverde, Hans; Tous, Loic; Lorenz, Anne; Choulat, Patrick; Horzel, Jörg; John, Joachim; Poortmans, Jef; Mertens, Robert (2012) -
Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection
Malinowski, Pawel; John, Joachim; Duboz, Jean-Yves; Hellings, Geert; Lorenz, Anne; Rodriguez Madrid, Juan; Sturdevant, Charles; Cheng, Kai; Leys, Maarten; Derluyn, Joff; Das, Jo; Germain, Marianne; Minoglou, Kiki; De Moor, Piet; Frayssinet, Eric; Semond, Fabrice; Hochedez, Jean-Francois; Giordanengo, Boris; Mertens, Robert (2009-12) -
Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells
Vermang, Bart; Goverde, Hans; Uruena De Castro, Angel; Lorenz, Anne; Cornagliotti, Emanuele; Rothschild, Aude; John, Joachim; Poortmans, Jef; Mertens, Robert (2012) -
Breakdown voltage mechanisms in AlGaN switching diodes
Lorenz, Anne; John, Joachim; Derluyn, Joff; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2007) -
Comparison of illumination level dependency and rear internal reflectance of PERC type cells with different dielectric passivation stacks
Lorenz, Anne; John, Joachim; Vermang, Bart; Cornagliotti, Emanuele; Poortmans, Jef (2011) -
Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
Kudrawiec, Robert; Paszkiewicz, B.; Motyka, M.; Misciewic, Jan; Derluyn, Joff; Lorenz, Anne; Cheng, Kai; Das, Jo; Germain, Marianne (2008-11) -
Development and optimization of scanning spreading resistance microscopy for measuring the two-dimensional carrier profile in solar cell structures
Eyben, Pierre; Seidel, Felix; Hantschel, Thomas; Schulze, Andreas; Lorenz, Anne; Uruena De Castro, Angel; Van Gestel, Dries; John, Joachim; Horzel, Jörg; Vandervorst, Wilfried (2011) -
Development and optimization of scanning spreading resistance microscopy for measuring the two-dimensional carrier profile in solar cell structures
Eyben, Pierre; Seidel, Felix; Hantschel, Thomas; Schulze, Andreas; Lorenz, Anne; Uruena De Castro, Angel; Van Gestel, Dries; John, Joachim; Horzel, Joerg; Vandervorst, Wilfried (2010) -
Development of rear side polishing adapted to advanced solar cell concepts
Horzel, Jörg; Lorenz, Anne; Cornagliotti, Emanuele; Uruena De Castro, Angel; John, Joachim; Izaaryene, M.; Habermann, D.; Jaffrennou, Périne; Penaud, Julien (2011) -
Dispersion effects in power switching devices basd on the III-N material system
Lorenz, Anne (2009-09) -
Evolutionary process development towards next generation crystalline silicon solar cells: A semiconductor process toolbox application
John, Joachim; Prajapati, Victor; Vermang, Bart; Lorenz, Anne; Allebe, Christophe; Rothschild, Aude; Tous, Loic; Uruena De Castro, Angel; Baert, Kris; Poortmans, Jef (2012) -
Experimental investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology
Avolio, G.; Raffo, A.; Schreurs, Dominique; Vadala, V.; Di Falco, S.; Lorenz, Anne; De Raedt, Walter; Nauwelaers, Bart; Vannini, G. (2010) -
Extreme ultraviolet Al(1-x)Ga(x)N photodetectors for future solar missions
Malinowski, Pawel; John, Joachim; Aparicio Alonso, Patricia; Lorenz, Anne; Cheng, Kai; Derluyn, Joff; Germain, Marianne; Borghs, Gustaaf; Mertens, Robert; Duboz, Jean Yves; Kroth, Udo; Richter, Matthias (2008) -
GaN technology on high-resistivity Si-substrates for high-power-amplifiers
Das, Jo; Derluyn, Joff; Lorenz, Anne; Oprins, Herman; Xiao, Dongping; De Raedt, Walter; Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2008) -
GaN-on-Si HEMT stress under high electric field condition
Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2008)