Browsing by author "Bescond, M."
Now showing items 1-3 of 3
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A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectrics
Autran, J.L.; Munteanu, D.; Bescond, M.; Houssa, Michel; Said, A. (2005) -
Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack
Autran, J.L.; Munteanu, D.; Houssa, Michel; Bescond, M.; Garros, X.; Leroux, C. (2004) -
Impact of high-k gate dielectrics on decananometer double-gate MOSFETs: gate-fringing field and parasitic charge effects
Munteanu, D.; Autran, J.L.; Bescond, M.; Houssa, Michel (2004)