Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Conference contributions
Impact of high-k gate dielectrics on decananometer double-gate MOSFETs: gate-fringing field and parasitic charge effects
Publication:
Impact of high-k gate dielectrics on decananometer double-gate MOSFETs: gate-fringing field and parasitic charge effects
Date
2004
Proceedings Paper
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Munteanu, D.
;
Autran, J.L.
;
Bescond, M.
;
Houssa, Michel
Journal
Abstract
Description
Metrics
Views
1853
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1853
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations