Browsing by author "Makkonen, Ilja"
Now showing items 1-6 of 6
-
A demonstration of donor passivation through direct formation of V-Asx complexes in GexSn1-x
Khanam, Afrina; Vohra, Anurag; Slotte, Jonatan; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey; Vandervorst, Wilfried (2020-05) -
Compensating defects in epitaxial Ge and GexSn1-x
Slotte, Jonatan; Khanam, Afrina; Vohra, Anurag; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey; Porret, Clément; Vandervorst, Wilfried (2019) -
Evolution of phosphorus-vacancy clusters in germanium
Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Pourtois, Geoffrey; Loo, Roger; Vandervorst, Wilfried (2019-01) -
Evolution of phosphorus-vacancy clusters in germanium
Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey; Vandervorst, Wilfried (2018) -
Heavily phosphorus doped germanium: strong relationship of phosphorus with vacancies and impact of Sn alloying on doping activation
Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Pourtois, Geoffrey; Porret, Clément; Loo, Roger; Vandervorst, Wilfried (2019) -
Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx
Vohra, Anurag; Makkonen, Ilja; Pourtois, Geoffrey; Slotte, Jonatan; Porret, Clément; Rosseel, Erik; Khanam, Afrina; Tirrito, Matteo; Douhard, Bastien; Loo, Roger; Vandervorst, Wilfried (2020-05)