Browsing by author "Van Deun, Rik"
Now showing items 1-6 of 6
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Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence
Shimura, Yosuke; Srinivasan, Ashwyn; Van Thourhout, Dries; Van Deun, Rik; Pantouvaki, Marianna; Van Campenhout, Joris; Loo, Roger (2016) -
Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures
Shimura, Yosuke; Srinivasan, Ashwyn; Van Thourhout, Dries; Van Deun, Rik; Pantouvaki, Marianna; Van Campenhout, Joris; Loo, Roger (2015) -
Ge epitaxial growth in view of optical device applications
Loo, Roger; Srinivasan, Ashwyn; Shimura, Yosuke; Porret, Clément; Van Thourhout, Dries; Van Deun, Rik; Stoica, Toma; Buca, Dan; Van Campenhout, Joris (2016) -
Highly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnections
Shimura, Yosuke; Srinivasan, Ashwyn; Van Thourhout, Dries; Van Deun, Rik; Pantouvaki, Marianna; Van Campenhout, Joris; Loo, Roger (2016) -
Laser annealed in-situ P-doped Ge for on-chip laser source apllications
Srinivasan, Ashwyn; Pantouvaki, Marianna; Shimura, Yosuke; Porret, Clément; Van Deun, Rik; Loo, Roger; Van Thourhout, Dries; Van Campenhout, Joris (2016) -
Low temperature in-situ P-doped Ge using Ge2H6 for use in optical applications
Shimura, Yosuke; Srinivasan, Ashwyn; Van Deun, Rik; Pantouvaki, Marianna; Van Campenhout, Joris; Loo, Roger (2015-05)