Publication:
Highly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnections
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1870 since deposited on 2021-10-23
1last month
Acq. date: 2026-04-06
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Views
1870 since deposited on 2021-10-23
1last month
Acq. date: 2026-04-06
Citations