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Highly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnections

Date

2016
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dc.contributor.authorShimura, Yosuke
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorVan Deun, Rik
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-23T14:52:20Z
dc.date.available2021-10-23T14:52:20Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27305
dc.source.conference9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically
dc.source.conferencedate11/01/2016
dc.source.conferencelocationSendai Japan
dc.title

Highly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnections

dc.typeMeeting abstract
dspace.entity.typePublication
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