Browsing by title

Hafnium aluminates deposited by atomic layer deposition: Structural characterization by X-ray spectroscopy

Huanca, D.R.; Christiano, V.; Adelmann, Christoph; Kellerman, G.; Verdonck, Patrick; dos Santos Filho, S. (2012)

Hafnium oxide based CMOS compatible ferroelectric materials

Schroeder, Uwe; Martin, D.; Mueller, J.; Yurchuk, E.; Mueller, S.; Adelmann, Christoph; Schloesser, T.; van Bentum, R.; Mikolajick, Thomas (2012)

Hafnium oxide films by atomic layer deposition for high-k gate dielectric applications: analysis of the density of nanometer-thin films

Puurunen, Riikka; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty; Green, Martin; Brijs, Bert; Richard, Olivier; Bender, Hugo; Conard, Thierry; Hoflijk, Ilse; Vandervorst, Wilfried; Hellin, David; Vanhaeren, Danielle; Zhao, Chao; De Gendt, Stefan; Heyns, Marc (2005)

Hafnium-based vertical ferroelectric FET: a new mass storage device

Van Houdt, Jan (2019)

Half-conductive coupling interconnection technology for digital transmission between CMOS chips

Devisch, Frédéric; Maillard, X.; Pan, Wanling; De Tandt, Cathleen; Vounckx, Roger; Kuijk, Maarten (2002)

Half-metallic NiMnSb Heusler alloy by MBE for spin-injection into semiconductors

Van Roy, Wim; Borghs, Gustaaf; De Boeck, Jo (2000)

Half-mode substrate integrated waveguide leaky-wave antenna based on a dielectric layer with periodic perforations

Kapusuz, Kamil Yavuz; Vanden Berghe, A.; Lemey, Sam; Rogier, Hendrik (2021)

Half-mode substrate-integrated-waveguide cavity-backed slot antenna on Cork substrate

Caytan, Olivier; Lemey, Sam; Agneessens, Sam; Vande Ginste, Dries; Demeester, Piet; Loss, Caroline; Salvado, Rita; Rogier, Hendrik (2016)

Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration

Sibaja-Hernandez, Arturo; You, Shuzhen; Van Huylenbroeck, Stefaan; Venegas, Rafael; De Meyer, Kristin; Decoutere, Stefaan (2011)

Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers

Avasarala, Naga Sruti; Donadio, Gabriele Luca; Witters, Thomas; Opsomer, Karl; Govoreanu, Bogdan; Fantini, Andrea; Clima, Sergiu; Oh, Hyungrock; Kundu, Shreya; Devulder, Wouter; van der Veen, Marleen; Van Houdt, Jan; Heyns, Marc; Goux, Ludovic; Kar, Gouri Sankar (2018)

Half-wavelength microcavity with two metal mirrors for organic light emitting diodes

Neyts, K.; Fork, D.; Weber, E. R.; De Visschere, Patrick (1998)

Hall effect and magnetic properties of ferromagnetic Ga1-xMnxAs thin films

Malfait, M.; Vanacken, J.; Van Roy, Wim; Primus, Jean-Louis; De Boeck, Jo; Moschalkov, V.V. (2003)

Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes

Oesterberg, Frederik Westergaard; Witthoeft, Maria-Louise; Dutta, Shibesh; Meersschaut, Johan; Adelmann, Christoph; Nielsen, Peter Former; Hansen, Ole; Petersen, Dirch Hjorth (2018)