Browsing by author "Job, R."
Now showing items 21-28 of 28
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Modification of the effective minority carrier lifetime of silicon substrates by heat treatment and/or hydrogenation
Ulyashin, A.G.; Scherff, M.; Job, R.; Fahrner, W.R.; Bilyalov, Renat; Poortmans, Jef; Abrosimov, N.; Riemann, H. (2003) -
P-N junction diode fabricated based on donor formation in plasma hydrogenated P-type czochralski silicon
Huang, Y.L.; Job, R.; Simoen, Eddy; Claeys, Cor; Ma, Y.; Dungen, W.; Fahrner, W.R.; Versluijs, Janko; Clauws, P. (2005) -
Role of hydrogen in separation of porous Si layer in a layer transfer process
Bilyalov, Renat; Solanki, Chetan Singh; Poortmans, Jef; Ulyashin, A.; Job, R.; Fahrne, W. (2003) -
Role of hydrogen in separation of porous Si layer in late transfer process
Bilyalov, Renat; Solanki, Chetan Singh; Poortmans, Jef; Ulyashin, A.; Job, R.; Fahrner, W. (2002) -
Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon
Ulyashin, A.; Job, R.; Fahrner, W.; Richard, Olivier; Bender, Hugo; Claeys, Cor; Simoen, Eddy; Grambole, D. (2002) -
The behaviour of oxygen in oxygenated n-type high-resistivity float-zone silicon
Simoen, Eddy; Claeys, Cor; Job, R.; Ulyashin, A. G.; Fahrner, W. R.; Tonelli, G.; Degryse, O.; Clauws, P. (2002) -
The influence of hydrogenation on the effective lifetime of silicon wafers
Ulyashin, A.; Scherff, M.; Job, R.; Fahrner, W.; Bilyalov, Renat; Matic, Zdeslav; Poortmans, Jef (2002) -
The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon
Huang, Y.L.; Ma, Y.; Job, R.; Fahrner, W.R.; Simoen, Eddy; Claeys, Cor (2005)