Browsing by author "Mols, Yves"
Now showing items 21-40 of 85
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DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Yadav, Sachin; Vais, Abhitosh; ElKashlan, Rana Y.; Witters, Liesbeth; Vondkar Kodandarama, Komal; Mols, Yves; Walke, Amey; Yu, Hao; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2021) -
Deep-level transient spectroscopy of GaAs nanoridge diodes grown on Si substrates
Syshchyk, Olga; Hsu, Brent; Yu, Hao; Motsnyi, Vasyl; Vais, Abhitosh; Kunert, Bernardette; Mols, Yves; Alcotte, Reynald; Puybaret, Renaud; Waldron, Niamh; Soussan, Philippe; Boulenc, Pierre; Karve, Gauri; Simoen, Eddy; Collaert, Nadine; Puers, Bob; Van Hoof, Chris (2020) -
Development of high efficiency 4-terminal mechanical photovoltaic stacks
Flamand, Giovanni; Posthuma, Niels; Mols, Yves; van der Heide, Johan; Zhao, Lu; Poortmans, Jef (2007) -
Development of mechanically stacked multi-junction solar cells applying thin, one-side contacted III-V cells
Flamand, Giovanni; Zhao, Lu; Mols, Yves; van der Heide, Johan; Poortmans, Jef (2009) -
Development of metamorphic dual-junction solar cells
Mols, Yves; Leys, Maarten; van der Heide, Johan; Posthuma, Niels; Zhao, Larry; Flamand, Giovanni; Poortmans, Jef; Borghs, Gustaaf (2007) -
Development of ultra-thin one-side contacted GaAs solar cells for mechanically stacked multi-junction solar cells
Zhao, Lu; Flamand, Giovanni; Mols, Yves; van der Heide, Johan; Poortmans, Jef (2009) -
Do we have to worry about extended defects in high-mobility materials?
Simoen, Eddy; Hsu, Brent; He, Liang; Mols, Yves; Kunert, Bernardette; Langer, Robert; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Claeys, Cor (2018) -
Effective contact resistivity reduction for Mo/Pd/n-In0.53Ga0.47As contact
Zhang, Jian; Wang, Linlin; Yu, Hao; Merckling, Clement; Mols, Yves; Vais, Abhitosh; Ramesh, Siva; Ivanov, Tsvetan; Schaekers, Marc; Horiguchi, Naoto; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin; Jiang, Yulong (2019) -
Electrical activity of extended defects in III-V semiconductors
Simoen, Eddy; Hsu, Brent; Mols, Yves; Kunert, Bernardette; Langer, Robert; Merckling, Clement; Alian, AliReza; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Claeys, Cor (2019) -
Electrical activity of extended defects in relaxed InxGa1-xAs hetero-epitaxial layers
Claeys, Cor; Hsu, Brent; Mols, Yves; Kunert, Bernardette; Bender, Hugo; Seidel, Felix; Carolan, Patrick; Langer, Robert; Merckling, Clement; Alian, AliReza; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Simoen, Eddy (2020) -
ESD characterization of planar InGaAs devices
Ji, Zhigang; Linten, Dimitri; Boschke, Roman; Hellings, Geert; Chen, Shih-Hung; Alian, AliReza; Zhou, Daisy; Mols, Yves; Ivanov, Tsvetan; Franco, Jacopo; Kaczer, Ben; Zhang, X.; Gao, R.; Zhang, J.F.; Zhang, W.; Collaert, Nadine; Groeseneken, Guido (2015) -
First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology
Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Sibaja-Hernandez, Arturo; Walke, Amey; Yu, Hao; Deshpande, Paru; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2019-12) -
From 5G to 6G: will compound semiconductors make the difference?
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
GaAs on Ge for CMOS
Brammertz, Guy; Caymax, Matty; Heyns, Marc; Meuris, Marc; Mols, Yves; Degroote, Stefan; Leys, Maarten (2007-05) -
GaAs on Ge for CMOS
Brammertz, Guy; Caymax, Matty; Meuris, Marc; Heyns, Marc; Mols, Yves; Degroote, Stefan; Leys, Maarten (2008) -
High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes
Yoshida, Shinichi; Lin, Dennis; Vais, Abhitosh; Alian, AliReza; Franco, Jacopo; El Kazzi, Salim; Mols, Yves; Miyanami, Yuki; Nakazawa, M.; Collaert, Nadine; Watanabe, H.; Thean, Aaron (2017) -
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
Kunert, Bernardette; Mols, Yves; Baryshnikova, Marina; Waldron, Niamh; Schulze, Andreas; Langer, Robert (2018) -
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance
Vais, Abhitosh; Yadav, Sachin; Mols, Yves; Vermeersch, Bjorn; Vondkar Kodandarama, Komal; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Boccardi, Guillaume; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Collaert, Nadine (2022) -
III-V nano-ridge growth on (001) Si for optoelectronics
Kunert, Bernardette; Mols, Yves; Shi, Yuting; Van Thourhout, Dries; Pantouvaki, Marianna; Van Campenhout, Joris; Langer, Robert (2017) -
III-V on a Si platform for the next generations of communication systems
Parvais, Bertrand; Vais, Abhitosh; Yadav, Sachin; Mols, Yves; Vermeersch, Bjorn; Vondkar Kodandarama, Komal; Boccardi, Guillaume; Kunert, Bernardette; Collaert, Nadine (2022)