Browsing by author "Nakatsuka, Osamu"
Now showing items 21-27 of 27
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Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010-10) -
Material assessment for uni-axial strained Ge pMOS -1: characterization of GeSn(B) materials
Vincent, Benjamin; Shimura, Yosuke; Takeuchi, Shotaro; Nishimura, Tsuyoshi; Demeulemeester, Jelle; Eneman, Geert; Clarysse, Trudo; Vandervorst, Wilfried; Vantomme, Andre; Nakatsuka, Osamu; Zaima, Shigeaki; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010) -
Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates
Yamazaki, Masahiro; Takeuchi, Shotaro; Nakatsuka, Osamu; Sakai, Akira; Ogawa, Masaki; Zaima, Shigeaki (2008) -
(Si)GeSn requirements for optical device applications and solar cells
Takeuchi, Shotaro; Vincent, Benjamin; Temst, Kristiaan; Vantomme, A.; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010-05) -
Structural and electrical properties of low temperature CVD-grown SiGe epitaxial layers
Ike, Shinichi; Simoen, Eddy; Shimura, Yosuke; Hikavyy, Andriy; Vandervorst, Wilfried; Loo, Roger; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki (2016) -
Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers
Shimura, Yosuke; Takeuchi, Shotaro; Sakai, Akira; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2007) -
Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates
Takeuchi, Shotaro; Sakai, Akira; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2008)