Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devices

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Authors
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki
Conference
The Forum on the Science and Technology of Silicon Materials - Si Forum
Title
Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devices
Publication type
Proceedings paper
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