Publication:

Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devices

Date

2010-10
Proceedings Paper
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dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorShimura, Yosuke
dc.contributor.authorNishimura, T
dc.contributor.authorVincent, Benjamin
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorDemeulemeester, Jelle
dc.contributor.authorTemst, Kristiaan
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorZaima, Shigeaki
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorTemst, Kristiaan
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-18T22:10:33Z
dc.date.available2021-10-18T22:10:33Z
dc.date.issued2010-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18064
dc.source.beginpage276
dc.source.conferenceThe Forum on the Science and Technology of Silicon Materials - Si Forum
dc.source.conferencedate14/11/2010
dc.source.conferencelocationOkayama City Japan
dc.source.endpage284
dc.title

Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devices

dc.typeProceedings paper
dspace.entity.typePublication
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