Browsing by author "Clima, Sergiu"
Now showing items 21-40 of 141
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Considerations for further scaling of metal–insulator–metal DRAM capacitors
Kaczer, Ben; Clima, Sergiu; Tomida, Kazuyuki; Govoreanu, Bogdan; Popovici, Mihaela Ioana; Kim, Min-Soo; Swerts, Johan; Wang, W. C.; Afanasiev, Valeri; Verhulst, Anne; Pourtois, Geoffrey; Groeseneken, Guido; Jurczak, Gosia (2013) -
Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector
Chai, Zheng; Zhang, Weidong; Clima, Sergiu; Hatem, Firas; Degraeve, Robin; Diao, Qihui; Zhang, Jian Fu; Freitas, Pedro; Marsland, John; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Defect profiling in FEFET Si:HfO2 layers
O'Sullivan, Barry; Putcha, Vamsi; Izmailov, Roman; Afanas'ev, Valeri V.; Simoen, Eddy; Jung, Taehwan; Higashi, Yusuke; Degraeve, Robin; Truijen, Brecht; Kaczer, Ben; Ronchi, Nicolo; McMitchell, Sean; Banerjee, Kaustuv; Clima, Sergiu; Breuil, Laurent; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan (2020) -
Designing the ideal transition-metal-oxide-based RRAM stack from first-principles thermodynamics and defect kinetics
Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Chen, Michael; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Jurczak, Gosia; Pourtois, Geoffrey (2015) -
Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations
Clima, Sergiu; Kaczer, Ben; Govoreanu, Bogdan; Popovici, Mihaela Ioana; Swerts, Johan; Verhulst, Anne; Jurczak, Gosia; De Gendt, Stefan; Pourtois, Geoffrey (2013) -
Device-to-Materials Pathway for Electron Traps Detection in Amorphous GeSe-Based Selectors
Slassi, Amine; Medondjio, Linda-Sheila; Padovani, Andrea; Tavanti, Francesco; He, Xu; Clima, Sergiu; Garbin, Daniele; Kaczer, Ben; Larcher, Luca; Ordejon, Pablo; Calzolari, Arrigo (2023) -
Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification
Clima, Sergiu; Verhulst, Anne; Bagul, Pratik; Truijen, Brecht; McMitchell, Sean; De Wolf, Ingrid; Pourtois, Geoffrey; Van Houdt, Jan (2022) -
Dielectric response of Ta2O5, Nb2O5 and NbTaO5 from first-principles investigations
Clima, Sergiu; Pourtois, Geoffrey; Van Elshocht, Sven; De Gendt, Stefan; Heyns, Marc; Wouters, Dirk; Kittl, Jorge (2009) -
Dielectric response of Ta2O5, Nb2O5, and NbTaO5 from first-principles investigations
Clima, Sergiu; Pourtois, Geoffrey; Hardy, An; Van Elshocht, Sven; Van Bael, Marlies; De Gendt, Stefan; Wouters, Dirk; Heyns, Marc; Kittl, Jorge (2010) -
Dielectric response of Ta2O5, NbTaO5 and Nb2O5 crystals by first-principles investigations
Clima, Sergiu; Pourtois, Geoffrey (2009) -
Direct probing of the dielectric scavenging-layer interface in oxide filamentary-based valence change memory
Celano, Umberto; Op de Beeck, Jonathan; Clima, Sergiu; Luebben, Michael; Koenraad, Paul; Goux, Ludovic; Valov, Ilia; Vandervorst, Wilfried (2017) -
Doped GeSe materials for selector applications
Avasarala, Naga Sruti; Govoreanu, Bogdan; Opsomer, Karl; Devulder, Wouter; Clima, Sergiu; Detavernier, Christophe; van der Veen, Marleen; Van Houdt, Jan; Heyns, Marc; Goux, Ludovic; Kar, Gouri Sankar (2017) -
Dynamic 'Hour Glass' model for SET and RESET in HfO2 RRAM
Degraeve, Robin; Fantini, Andrea; Clima, Sergiu; Govoreanu, Bogdan; Goux, Ludovic; Chen, Yangyin; Wouters, Dirk; Roussel, Philippe; Kar, Gouri Sankar; Pourtois, Geoffrey; Cosemans, Stefan; Kittl, Jorge; Groeseneken, Guido; Jurczak, Gosia; Altimime, Laith (2012) -
Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Meal-Ferroelectric-Metal Capacitors
Walke, Amey; Popovici, Mihaela Ioana; Banerjee, Kaustuv; Clima, Sergiu; Kumbhare, Pankaj; Desmet, Johan; Meersschaut, Johan; Van den Bosch, Geert; Delhougne, Romain; Kar, Gouri Sankar; Van Houdt, Jan (2022-07-12) -
Electronic properties and conduction defects from first principles in doped GexSe1-x materials for selector applications
Clima, Sergiu; Opsomer, Karl; Devulder, Wouter; Goux, Ludovic; Afanasiev, Valeri; Kar, Gouri Sankar; Pourtois, Geoffrey (2018) -
Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia
McMitchell, Sean; Clima, Sergiu; Ronchi, Nicolo; Banerjee, Kaustuv; Celano, Umberto; Popovici, Mihaela Ioana; Di Piazza, Luca; Van den Bosch, Geert; Van Houdt, Jan (2021) -
Endurance failure mechanisms in TiN\Ta2O5\Ta RRAM stack
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Chen, Yangyin; Groeseneken, Guido; Jurczak, Gosia (2015) -
Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing scheme
Hatem, Firas Odai Hatem; Chai, Z.; Zhang, Wei; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Garbin, Daniele; Robertson, J.; Guo, Y,; Zhang, J.F.; Marsland, John; Freitas, Pedro; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Endurance/retention trade-off on HfO2 / metal cap 1T1R bipolar RRAM
Chen, Yangyin; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Degraeve, Robin; Kar, Gouri Sankar; Fantini, Andrea; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Engineering of Hf1-xAlxOy amorphous dielectrics for high-performance RRAM applications
Fantini, Andrea; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Adelmann, Christoph; Polimeni, Giuseppe; Chen, Yangyin; Komura, Masanori; Belmonte, Attilio; Wouters, Dirk; Jurczak, Gosia (2014)